Samsung Electronics is now producting the highest density mobile memory for next-generation smartphones, which will bring a shift to the market from the 2GB packages widely used in current devices.

The three-gigabyte (GB) low power double data rate 3 (LPDDR3) mobile DRAM uses six of the industry’s smallest 20-nanometer (nm) class 4GB LPDDR3 chips, in a symmetrical structure of two sets of three chips stacked in a single package only 0.8 mm high, said a statement.

With a full line-up of package dimensions, the new ultra-slim memory solutions will enable thinner smartphone designs and allow for additional battery space, while offering a data transfer speed of up to 2,133 megabits per second (Mbps) per pin, it said.

“Three gigabyte mobile DRAM will be adopted in the most up-to-date, high-end smartphones starting in the second half of this year - an initial adoption that will expand to most high-end smartphones worldwide next year,” said Young-Hyun Jun, executive vice president, memory sales and marketing.

“We will develop a new 3GB LPDDR3 solution based on four 6Gb LPDDR3 DRAM chips by symmetrically stacking two chips on each side, which will boost smartphone performance to the next level by year-end.”

With the increased mobile DRAM capacity, users can avail high-quality, Full HD video playback and faster multitasking on their smartphones, said the statement.

It will also speed up data downloading and will be able to offer full support for LTE Advanced service, a next-generation mobile telecommunication standard, it said. - TradeArabia News Service