Panasonic Corporation and Sansha Electric MFG Co have developed a compact Silicon Carbide (SiC) power module with highly efficient operation of power switching systems.

The SiC power module has sufficiently good reliability and will help to reduce the size of power switching systems such as industrial inverters and power supplies, said a statement.

SiC is very promising due to its superior material properties and is expected to reduce the power consumption of various switching systems, it said.

These high power switching devices need to be packaged into a so-called power module in which multi transistors are integrated.

The developed SiC power module is based on proprietary technologies including Panasonic’s SiC DioMOS (Diode-integrated MOSFET), which has the features of a reverse conducting diode without any external diode. The total chip area of SiC is reduced by half from a conventional SiC, which helps to reduce the total footprint of the module.

It also includes Sansha Electric’s Techno Block module technologies that utilises solder bonding for the SiC chips without any wire bonding. This configuration will reduces the height of the module by half from conventional ones as well as they can serve three times better endurance of power cycling tests.

The fabricated SiC power module integrates two SiC transistors into one package and achieves 6mΩ of on-state resistance with a rating current/voltage of 150A/1200V.

The total volume of the module is reduced by one third compared to a conventional SiC power module. These features together with good reliability enable very compact and highly efficient power switching systems. - TradeArabia News Service